Analytical and numerical simulation of electron beam induced current profiles in p-n junctions
Author:
Affiliation:
1. George Washington University, Washington, DC 20053, USA
2. Naval Research Laboratory, Washington, DC 20375, USA
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5049117
Reference19 articles.
1. Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers
2. Stacking fault nucleation sites in diffused 4H-SiC p‐i‐n diodes.
3. Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis
4. Theory of life time measurements with the scanning electron microscope: Steady state
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