GaN atomic electric fields from a segmented STEM detector: Experiment and simulation

Abstract

SummaryAtomic electric fields in a thin GaN sample are measured with the centre‐of‐mass approach in 4D‐scanning transmission electron microscopy (4D‐STEM) using a 12‐segmented STEM detector in a Spectra 300 microscope. The electric fields, charge density and potential are compared to simulations and an experimental measurement using a pixelated 4D‐STEM detector. The segmented detector benefits from a high recording speed, which enables measurements at low radiation doses. However, there is measurement uncertainty due to the limited number of segments analysed in this study.