Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial GaN-Reference-Cited by-同舟云学术

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Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial GaN

Published:2018-07-03 Issue:8 Volume:18 Page:4866-4870
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Moonsang¹^ORCID,Baik Hionsuck²^ORCID,Ryu Wontaek³,Jo Yewon²,Kong SeongYoung²,Yang Mino²⁴^ORCID

Affiliation:

1. Korea Basic Science Institute, Daejeon 34133, Korea

2. Korea Basic Science Institute Seoul, Seoul 02841, Korea

3. Center for Inter-University Research Facility, Kookmin University, Seoul 02707, Korea

4. Laboratoire de Physique des Solides (UMR CNRS 8502), Université Paris Sud, Orsay 91405, France

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b01488

Reference26 articles.

1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

2. Prospects of III-nitride optoelectronics grown on Si

3. GaN-based epitaxy on silicon: stress measurements

4. High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

5. Theory of Threading Edge and Screw Dislocations in GaN

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1. Growth mechanism and electronic properties of stacking mismatch boundaries in wurtzite III-nitride material;Physical Review B;2023-04-24

2. Partial Dislocation Climb in Nitride Semiconductors;SSRN Electronic Journal;2022

3. Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap Level;Nano Letters;2021-07-30

4. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy;Scientific Reports;2019-05-09

5. Direct observation of an electrically degenerate interface layer in a GaN/sapphire heterostructure;Nanoscale;2019

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