Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap Level-Reference-Cited by-同舟云学术

Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap Level

Author:

Lee Moonsang¹^ORCID,Nam Seunghyun¹,Cho Byungjin²,Kwon Ojun²,Lee Hyun Uk³,Hahm Myung Gwan¹^ORCID,Kim Un Jeong⁴,Son Hyungbin⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea

2. Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea

3. Research Center for Materials Analysis, Korea Basic Science Institute (KBSI), Daejeon 34133, Republic of Korea

4. Imaging Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea

5. School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea

Funder

Inha University

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference50 articles.

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