Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures-Reference-Cited by-同舟云学术

Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures

Published:2015-05-11 Issue:6 Volume:15 Page:3770-3779
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Renjie¹,Dayeh Shadi A.¹

Affiliation:

1. Department of Electrical and Computer Engineering and ‡Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, United States

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00327

Reference66 articles.

1. Integrated nanoelectronics for the future

2. Solid-state reaction of nickel silicide and germanide contacts to semiconductor nanochannels

3. Nanometre-scale electronics with III–V compound semiconductors

4. Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$

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