Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films-Reference-Cited by-同舟云学术

Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films

Published:2016-02-09 Issue:3 Volume:16 Page:1782-1786
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Herklotz Andreas¹,Rus Stefania Florina²,Ward Thomas Zac¹

Affiliation:

1. Materials Science and Technology Division, ORNL, Bethel Valley Road, Oak Ridge, Tennessee 37831-6056, United States

2. Renewable Energies Laboratory - Photovoltaics, National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara 300569, Romania

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b04815

Reference35 articles.

1. Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices

2. Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

3. Strain-Driven Electronic Band Structure Modulation of Si Nanowires

4. Tailoring the Optical Properties of Silicon Nanowire Arrays through Strain

5. Massive band gap variation in layered oxides through cation ordering

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