Strain-Driven Electronic Band Structure Modulation of Si Nanowires
Author:
Affiliation:
1. Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Korea
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl0734140
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1. High Performance Silicon Nanowire Field Effect Transistors
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