Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications-Reference-Cited by-同舟云学术

Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications

Published:2021-12-06 Issue:24 Volume:21 Page:10400-10408
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wang Bolun¹,Wang Xuewen¹,Wang Enze¹,Li Chenyu¹,Peng Ruixuan¹,Wu Yonghuang¹,Xin Zeqin¹,Sun Yufei¹,Guo Jing¹,Fan Shoushan²³,Wang Chen¹,Tang Jianshi⁴⁵^ORCID,Liu Kai¹^ORCID

Affiliation:

1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China

2. Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, People’s Republic of China

3. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China

4. School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People’s Republic of China

5. Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c03684

Reference60 articles.

1. Neuromorphic nanoelectronic materials