Grain‐Boundary Engineering of Monolayer MoS 2 for Energy‐Efficient Lateral Synaptic Devices-Reference-Cited by-同舟云学术

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Grain‐Boundary Engineering of Monolayer MoS 2 for Energy‐Efficient Lateral Synaptic Devices

Published:2021-07-04 Issue:32 Volume:33 Page:2102435
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wang Xuewen¹,Wang Bolun¹,Zhang Qinghua²,Sun Yufei¹,Wang Enze¹,Luo Hao¹,Wu Yonghuang¹,Gu Lin²,Li Huanglong³,Liu Kai¹^ORCID

Affiliation:

1. State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China

2. Institute of Physics Chinese Academy of Sciences Beijing 100190 China

3. Department of Precision Instrument Center for Brain Inspired Computing Research Tsinghua University Beijing 100084 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202102435

Reference56 articles.

1. The missing memristor found

2. Memristive devices for computing

3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

4. A million spiking-neuron integrated circuit with a scalable communication network and interface

5. Synaptic plasticity: taming the beast

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1. Two-dimensional materials based memtransistors: Integration strategies, switching mechanisms and advanced characterizations;Nano Energy;2024-09

2. Perceiving the Spectrum of Pain: Wavelength-Sensitive Visual Nociceptive Behaviors in Monolayer MoS₂-Based Optical Synaptic Devices;ACS Photonics;2024-08-20

3. High‐Performance 2D Ambipolar MoTe₂ Lateral Memristors by Mild Oxidation;Small;2024-07-03

4. Excellent visible light absorption and ultra-high photoelectric conversion efficiency of two-dimensional (MoSe2)x(MoSTe)1-x mosaic heterostructures;Chemical Physics;2024-07

5. Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping;Journal of Vacuum Science & Technology B;2024-07-01

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