Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films-Reference-Cited by-同舟云学术

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films

Published:2021-09-01 Issue:18 Volume:21 Page:7691-7698
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhao Yi-Fan¹,Zhou Ling-Jie¹,Wang Fei¹,Wang Guang¹,Song Tiancheng²^ORCID,Ovchinnikov Dmitry²^ORCID,Yi Hemian¹,Mei Ruobing¹,Wang Ke³,Chan Moses H. W.¹,Liu Chao-Xing¹,Xu Xiaodong²⁴^ORCID,Chang Cui-Zu¹^ORCID

Affiliation:

1. Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

2. Department of Physics, University of Washington, Seattle, Washington 98195, United States

3. Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

4. Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, United States

Funder

Army Research Office

Gordon and Betty Moore Foundation

Air Force Office of Scientific Research

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c02493

Reference48 articles.

1. Model for a Quantum Hall Effect without Landau Levels: Condensed-Matter Realization of the "Parity Anomaly"

2. Quantized Anomalous Hall Effect in Magnetic Topological Insulators

3. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

4. Quantum anomalous Hall effect and related topological electronic states

5. The Quantum Anomalous Hall Effect: Theory and Experiment

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