Exchange bias in heterostructures combining magnetic topological insulator MnBi2Te4 and metallic ferromagnet Fe3GeTe2

Author:

Qi Wuyi123ORCID,Fei Fucong134ORCID,Zhang Zhixin123,Chen Bo123,Xie Hangkai123ORCID,Wei Boyuan123,Zhang Shuai123ORCID,Song Fengqi123ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210093, China

2. School of Physics, Nanjing University 2 , Nanjing 210093, China

3. Atom Manufacturing Institute 3 , Nanjing 211806, China

4. School of Materials Science and Intelligent Engineering, Nanjing University 4 , Suzhou 215163, China

Abstract

Introducing magnetism into topological insulators enables exotic phenomena such as quantum anomalous Hall effect. By fabricating van der Waals (vdW) heterostructures using layered magnetic materials, we can not only induce a gap in the non-magnetic topological surface states through magnetic proximity but also further manipulate the magnetic properties of magnetic topological insulators. However, the scarcity of 2D ferromagnetic insulator materials limits the fabrication of such heterostructures. Here, we demonstrate the vdW heterostructure devices comprising metal ferromagnetic Fe3GeTe2 nanoflakes and few-layer antiferromagnetic topological insulator MnBi2Te4 separated by an insulating hexagonal-boron nitride spacer. These devices exhibit significant exchange bias with the exchange bias field of over 100 mT under certain conditions. Our results prove that besides magnetic insulators, metallic magnets can also effectively adjust the magnetic properties of topological insulators, thereby inspiring diverse configurations of the heterostructures between topological insulators and magnetic materials.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Publisher

AIP Publishing

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