Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> Using Molecular Beam Epitaxy: Implications for Defect Control-Reference-Cited by-同舟云学术

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi₂Te₄ Using Molecular Beam Epitaxy: Implications for Defect Control

Published:2024-08-28 Issue:17 Volume:7 Page:21149-21159
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Kim Hyunsue¹,Liu Mengke¹,Frammolino Lisa¹,Li Yanxing¹,Zhang Fan¹,Lee Woojoo¹,Dong Chengye²,Zhao Yi-Fan³,Chen Guan-Yu⁴,Hsu Pin-Jui⁴^ORCID,Chang Cui-Zu³^ORCID,Robinson Joshua²³^ORCID,Yan Jiaqiang⁵^ORCID,Li Xiaoqin¹^ORCID,MacDonald Allan H.¹,Shih Chih-Kang¹^ORCID

Affiliation:

1. Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States

2. 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

3. Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

4. Department of Physics, National Tsing Hua University, 300044 Hsinchu, Taiwan

5. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Funder

Army Research Office

Gordon and Betty Moore Foundation

Basic Energy Sciences

Air Force Office of Scientific Research

National Science Foundation

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c04518

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