Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine-Reference-Cited by-同舟云学术

Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine

Published:2023-10-11 Issue:20 Volume:23 Page:9626-9633
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Park Eunpyo¹²,Jang Suyeon²³⁴,Noh Gichang¹,Jo Yooyeon¹,Lee Dae Kyu¹,Kim In Soo⁵⁶^ORCID,Song Hyun-Cheol⁶⁷^ORCID,Kim Sangbum²³⁴^ORCID,Kwak Joon Young¹⁸^ORCID

Affiliation:

1. Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

2. Department of Materials Science & Engineering, Seoul National University, Seoul 08826, Republic of Korea

3. Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea

4. Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Republic of Korea

5. Nanophotonics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

6. KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

7. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

8. Division of Nanoscience and Technology, Korea University of Science and Technology (UST), Daejeon 34113, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c03510

Reference45 articles.

1. Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

2. Recent Advances in Synaptic Nonvolatile Memory Devices and Compensating Architectural and Algorithmic Methods Toward Fully Integrated Neuromorphic Chips

3. Band‐tailored van der Waals heterostructure for multilevel memory and artificial synapse

4. In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy

5. Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐ k Laminates

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