Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX<sub>3</sub> (X = I, Br)/2D Metal Contacts-Reference-Cited by-同舟云学术

Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX₃ (X = I, Br)/2D Metal Contacts

Published:2023-03-13 Issue:11 Volume:14 Page:2807-2815
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Hu Yanmei¹,Hu Xiaohui¹²^ORCID,Wang Yifeng¹²^ORCID,Lu Chunhua¹²^ORCID,Krasheninnikov Arkady V.³⁴^ORCID,Chen Zhongfang⁵^ORCID,Sun Litao⁶^ORCID

Affiliation:

1. College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China

2. Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China

3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany

4. Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland

5. Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan, Puerto Rico 00931, United States

6. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China

Funder

Deutsche Forschungsgemeinschaft

Natural Science Foundation of Jiangsu Province

Central University Basic Research Fund of China

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Jiangsu Planned Projects for Postdoctoral Research Funds

Key Laboratory of MEMS of Ministry of Education, Southeast University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c00354

Reference61 articles.

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4. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

5. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

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