Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3-Reference-Cited by-同舟云学术

Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Published:2018-06-28 Issue:1 Volume:9 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Wang Zhe^ORCID,Gutiérrez-Lezama Ignacio,Ubrig Nicolas^ORCID,Kroner Martin,Gibertini Marco,Taniguchi Takashi,Watanabe Kenji^ORCID,Imamoğlu Ataç,Giannini Enrico^ORCID,Morpurgo Alberto F.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/s41467-018-04953-8.pdf

Reference39 articles.

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3. Xu, X., Yao, W., Xiao, D. & Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 10, 343–350 (2014).

4. Novoselov, K. S., & Mishchenko, A. & Carvalho, A. & Castro Neto, A. H. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).

5. Dillon, J. F. & Olson, C. E. Magnetization resonance and optical properties of ferromagnet CrI3. J. Appl. Phys. 36, 1259–1260 (1965).

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