Ag/HfO<sub><i>x</i></sub>/Pt Unipolar Memristor for High-Efficiency Logic Operation-Reference-Cited by-同舟云学术

Ag/HfO_x/Pt Unipolar Memristor for High-Efficiency Logic Operation

Published:2022-08-22 Issue:34 Volume:13 Page:8019-8025
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Wang Yuchen¹,Zhou Guangdong¹²^ORCID,Sun Bai³^ORCID,Wang Wenhua¹,Li Jie²,Duan Shukai²,Song Qunliang¹^ORCID

Affiliation:

1. School of Materials and Energy, Southwest University, Chongqing 400715, China

2. College of Artificial Intelligence, Southwest University, Chongqing 400715, China

3. Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Funder

Natural Science Foundation of Guizhou Province

Natural Science Foundation of Chongqing

Central University Basic Research Fund of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.2c01906

Reference42 articles.

1. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

2. Refining the Negative Differential Resistance Effect in a TiOx-Based Memristor

3. A Modified SiO₂-Based Memristor with Reliable Switching and Multifunctional Synaptic Behaviors

4. Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor

5. Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

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