A Modified SiO2-Based Memristor with Reliable Switching and Multifunctional Synaptic Behaviors-Reference-Cited by-同舟云学术

A Modified SiO₂-Based Memristor with Reliable Switching and Multifunctional Synaptic Behaviors

Published:2022-01-20 Issue:3 Volume:13 Page:884-893
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Ilyas Nasir¹²,Li Chunmei¹,Wang Jinyong¹,Jiang Xiangdong¹,Fu Hao²,Liu Fucai¹^ORCID,Gu Deen¹^ORCID,Jiang Yadong¹³,Li Wei¹³^ORCID

Affiliation:

1. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

2. School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

Funder

Natural Science Foundation of China

National Science Funds for Excellent Young Scholars of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c03912

Reference60 articles.

1. Emulation of biphasic plasticity in retinal electrical synapses for light-adaptive pattern pre-processing

2. On-Chip TaOx-Based Non-volatile Resistive Memory for in vitro Neurointerfaces

3. Resistive switching materials for information processing

4. Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

5. Memristive devices for computing

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