Refining the Negative Differential Resistance Effect in a TiOx-Based Memristor-Reference-Cited by-同舟云学术

Refining the Negative Differential Resistance Effect in a TiOx-Based Memristor

Published:2021-06-02 Issue:22 Volume:12 Page:5377-5383
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Hu Xiaofang¹,Wang Wenhua¹,Sun Bai²^ORCID,Wang Yuchen¹,Li Jie¹,Zhou Guangdong¹^ORCID

Affiliation:

1. College of Artificial Intelligence, Faculty of Materials and Energy, Southwest University, Chongqing 400715, China

2. Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo N2L 3G1, Ontario, Canada

Funder

Natural Science Foundation of Chongqing

National Natural Science Foundation of China

Natural Science Foundation of Guizhou Province

Postdoctoral Program for the Innovative Talent Support of Chongqing

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c01420

Reference39 articles.

1. Esaki diode is still a radio star, half a century on

2. New Phenomenon in Narrow Germaniump−nJunctions

3. Near-Perfect Spin Filtering and Negative Differential Resistance in an Fe(II)S Complex

4. Negative Differential Resistance Probe for Interdot Interactions in a Double Quantum Dot Array

5. Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state

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