Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces-Reference-Cited by-同舟云学术

Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces

Published:2012-08-24 Issue:35 Volume:116 Page:18746-18751
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Grazianetti Carlo¹²,Molle Alessandro¹,Tallarida Grazia¹,Spiga Sabina¹,Fanciulli Marco¹²

Affiliation:

1. Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864, Agrate Brianza (MB), Italy

2. Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via R. Cozzi 53, I-20126, Milano (MI), Italy

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp3042318

Reference27 articles.

1. Unified defect model and beyond

2. Nanometre-scale electronics with III–V compound semiconductors

3. Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2×4)

4. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

5. Dangling bond charge transition levels in AlAs, GaAs, and InAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. How Oxygen Absorption Affects the Al 2 O 3 ‐Encapsulated Blue Phosphorene–Au Alloy;physica status solidi (RRL) – Rapid Research Letters;2021-06-25

2. The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction;ACS Applied Materials & Interfaces;2016-12-14

3. Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition;ACS Applied Materials & Interfaces;2014-02-21

4. Hindering the Oxidation of Silicene with Non-Reactive Encapsulation;Advanced Functional Materials;2013-04-09