Dangling bond charge transition levels in AlAs, GaAs, and InAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3515422
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1. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
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4. Electrical Properties of III-V/Oxide Interfaces
5. In[sub 0.53]Ga[sub 0.47]As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and LaAlO[sub 3] gate dielectrics
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1. Dangling bonds, the charge neutrality level, and band alignment in semiconductors;Journal of Applied Physics;2024-02-16
2. Shockley-Read-Hall recombination and trap levels in In0.53Ga0.47As point defects from first principles;Physical Review B;2023-09-26
3. Atomic layer deposition of diethylzinc/zinc oxide on InAs surface quantum dots: Self-clean-up and passivation processes;Applied Surface Science;2023-03
4. Properties and modification of native oxides of InP(100);Journal of Physics D: Applied Physics;2022-12-13
5. Effects of B and In on the band structure of BGa(In)As alloys;Journal of Applied Physics;2022-11-21
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