Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3182734
Reference24 articles.
1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
2. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
3. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)
4. Model of interface states at III-V oxide interfaces
5. Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics
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