Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2×4)
Author:
Publisher
The Electrochemical Society
Link
https://iopscience.iop.org/article/10.1149/1.2981627/pdf
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic structures and electronic properties of molecular oxygen adsorption on In0.19Ga0.81As(100) surface: Ab-initio study combined with XPS/UPS analysis;Surface Science;2023-01
2. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy;Applied Physics Letters;2022-11-07
3. Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p -type doped InP(001);Physical Review Materials;2019-09-20
4. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces;The Journal of Chemical Physics;2015-10-28
5. Dual Passivation of Intrinsic Defects at the Compound Semiconductor/Oxide Interface Using an Oxidant and a Reductant;ACS Nano;2015-04-21
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