The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces-Reference-Cited by-同舟云学术

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Published:2015-10-28 Issue:16 Volume:143 Page:164711
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Kent Tyler¹,Tang Kechao²,Chobpattana Varistha³,Negara Muhammad Adi²,Edmonds Mary¹,Mitchell William³,Sahu Bhagawan⁴,Galatage Rohit⁴^ORCID,Droopad Ravi⁵,McIntyre Paul²,Kummel Andrew C.¹

Affiliation:

1. Materials Science and Engineering Department, University of California, San Diego, California 9500, USA

2. Materials Science and Engineering Department, Stanford University, Stanford, California 94305, USA

3. Materials Department, University of California, Santa Barbara, California 93106, USA

4. Global Foundries, 2600 Great America Way, Santa Clara, California 95054, USA

5. Department of Physics, Texas State University, San Marcos, Texas 78666, USA

Funder

National Science Foundation (NSF)

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934656

Reference40 articles.

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5. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

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