Shallow Impurity States in Doped Silicon Substrates Enabling High Responsivity for Graphene Mid-Infrared Photodetectors
Author:
Affiliation:
1. Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States
2. NASA Langley Research Center, Hampton, Virginia 23681, United States
Funder
Earth Science Technology Office, NASA
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c02011
Reference71 articles.
1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems
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5. Far-infrared absorption in GaAs:Te liquid phase epitaxial films
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