Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3059559
Reference9 articles.
1. Detection of individual 0.4–28 μm wavelength photons via impurity‐impact ionization in a solid‐state photomultiplier
2. Far infrared photoconductivity studies in silicon blocked impurity band structures
3. Far-infrared absorption in Sb-doped Ge epilayers near the metal–insulator transition
4. Far-infrared absorption in GaAs:Te liquid phase epitaxial films
5. Alternate operating mode for long wavelength blocked impurity band detectors
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