Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis-Reference-Cited by-同舟云学术

Structure–Charge Transport Relationships in Fluoride-Doped Amorphous Semiconducting Indium Oxide: Combined Experimental and Theoretical Analysis

Published:2019-12-20 Issue:2 Volume:32 Page:805-820
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Sil Aritra,Avazpour Laleh¹,Goldfine Elise A.,Ma Qing²^ORCID,Huang Wei^ORCID,Wang Binghao^ORCID,Bedzyk Michael J.^ORCID,Medvedeva Julia E.¹,Facchetti Antonio³^ORCID,Marks Tobin J.^ORCID

Affiliation:

1. Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, United States

2. DND-CAT, Northwestern Synchrotron Research Center at the Advanced Photon Source, Argonne, Illinois 60439, United States

3. Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.9b04257

Reference116 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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4. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

5. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

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