In-situ fluorine-doped ZnSnO thin film and thin-film transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600°C;Um;Appl Phys Lett,2018
2. Fluorinated InGaZnO thin-film transistor with HfLaO gate dielectric;Qian;IEEE Electron Device Lett,2014
3. Self-aligned bottom-gate In—Ga—Zn—O thin-film transistor with source/drain regions formed by direct deposition of fluorinated silicon nitride;Jiang;IEEE Electron Device Lett,2014
4. Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress;Jiang;Appl Phys Express,2014
5. Fluorine-controlled subgap states and negative bias illumination stability behavior in solution-processed InZnOF thin-film transistor;Li;Appl Phys A,2019
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