Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=11/a=114103/pdf
Reference23 articles.
1. Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Review paper: Transparent amorphous oxide semiconductor thin film transistor
4. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
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