Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors

Author:

Khan Rizwan1,Shong Bonggeun2ORCID,Ko Byeong Guk1,Lee Jae Kwang1,Lee Hyunsoo3,Park Jeong Young3ORCID,Oh Il-Kwon4,Raya Shimeles Shumi2,Hong Hyun Min5,Chung Kwun-Bum5,Luber Erik J.6ORCID,Kim Yoon-Seok7,Lee Chul-Ho7,Kim Woo-Hee8ORCID,Lee Han-Bo-Ram1ORCID

Affiliation:

1. Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea

2. Department of Chemical Engineering, Hongik University, Seoul 04066, Korea

3. Center for Nanomaterials and Chemical Reactions, IBS and Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea

4. School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Korea

5. Division of Physics Semiconductor, Dongguk University, Seoul 100-715, Korea

6. Department of Chemistry, University of Alberta, Edmonton, Alberta T6G 2G2, Canada

7. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, Korea

8. Division of Advanced Materials Engineering, Chonbuk National University, Jeonbuk 54896, Korea

Funder

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

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