Area-Selective Atomic Layer Deposition of Ruthenium via Reduction of Interfacial Oxidation-Reference-Cited by-同舟云学术

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Area-Selective Atomic Layer Deposition of Ruthenium via Reduction of Interfacial Oxidation

Published:2024-09-13 Issue: Volume: Page:
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Cho Eun-Hyoung¹^ORCID,Kong Dabin²,Cho Iaan³,Leem Youngchul¹,Lee Young Min¹,Kim Miso³,Nguyen Chi Thang²,Lee Jeong Yub¹,Shong Bonggeun³^ORCID,Lee Han-Bo-Ram²^ORCID

Affiliation:

1. 2D Device TU, Samsung Advanced Institute of Technology, Gyeonggi 16678, Korea

2. Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea

3. Department of Chemical Engineering, Hongik University, Seoul 04066, Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.4c01133

Reference63 articles.

1. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning

2. Ferroelectric field-effect transistors based on HfO2: a review

3. Kim, H.; Ahn, S. J.; Shin, Y. G.; Lee, K.; Jung, E. In Evolution of NAND Flash Memory : From 2D to 3D as a Storage Market Leader, IEEE International Memory Workshop (IMW); IEEE, 2017.

4. Applications of atomic layer deposition to nanofabrication and emerging nanodevices

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