Configurational Entropy of Adlayers in Atomic Layer Deposition-Reference-Cited by-同舟云学术

Configurational Entropy of Adlayers in Atomic Layer Deposition

Published:2017-06-29 Issue:13 Volume:29 Page:5458-5462
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Shi Lei¹,Gao Zhengning¹,Liu Zhaonan¹,Myung Yoon¹^ORCID,Banerjee Parag¹^ORCID

Affiliation:

1. Department of Mechanical Engineering & Materials Science, ‡Institute of Materials Science & Engineering, and §Department of Computer Science & Engineering, Washington University, One Brookings Drive, St. Louis, Missouri 63130, United States

Funder

Army Research Office

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b04829

Reference28 articles.

1. Atomic Layer Deposition: An Overview

2. Precursors as enablers of ALD technology: Contributions from University of Helsinki

3. Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films

4. Applications of atomic layer deposition to nanofabrication and emerging nanodevices

5. Atomic Layer Deposition of Nanostructured Materials for Energy and Environmental Applications

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