Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films-Reference-Cited by-同舟云学术

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Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films

Published:2013-12 Issue:23-24 Volume:257 Page:3222-3231
ISSN:0010-8545
Container-title:Coordination Chemistry Reviews
language:en
Short-container-title:Coordination Chemistry Reviews

Author:

Knisley Thomas J.,Kalutarage Lakmal C.,Winter Charles H.

Funder

U.S. National Science Foundation

Semiconductor Research Corporation

SAFC Hitech

Wayne State University

Publisher

Elsevier BV

Subject

Materials Chemistry,Physical and Theoretical Chemistry,Inorganic Chemistry

Reference115 articles.

1. The application of atomic layer deposition for metallization of 65 nm and beyond

2. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

3. Copper interconnects for semiconductor devices

4. Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide

5. Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45nm

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