Reaction and Growth Mechanisms in Al2O3 deposited via Atomic Layer Deposition: Elucidating the Hydrogen Source-Reference-Cited by-同舟云学术

Reaction and Growth Mechanisms in Al2O3 deposited via Atomic Layer Deposition: Elucidating the Hydrogen Source

Published:2017-10-03 Issue:20 Volume:29 Page:8690-8703
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Guerra-Nuñez Carlos¹^ORCID,Döbeli Max²,Michler Johann¹,Utke Ivo¹

Affiliation:

1. Laboratory for Mechanics of Materials and Nanostructure, EMPA, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, CH-3602 Thun, Switzerland

2. Ion Beam Physics, ETH Zürich, Otto-Stern-Weg 5, CH-8093 Zürich, Switzerland

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b02759

Reference45 articles.

1. Atomic and molecular layer deposition: off the beaten track

2. Atomic Layer Deposition in Energy Conversion Applications

3. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

4. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

5. Plasma and Thermal ALD of Al[sub 2]O[sub 3] in a Commercial 200 mm ALD Reactor

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