Thermal Atomic Layer Etching of CoO, ZnO, Fe2O3, and NiO by Chlorination and Ligand Addition Using SO2Cl2 and Tetramethylethylenediamine-Reference-Cited by-同舟云学术

Thermal Atomic Layer Etching of CoO, ZnO, Fe₂O₃, and NiO by Chlorination and Ligand Addition Using SO₂Cl₂ and Tetramethylethylenediamine

Published:2023-02-20 Issue:5 Volume:35 Page:2058-2068
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Partridge Jonathan L.¹^ORCID,Murdzek Jessica A.¹,Johnson Virginia L.¹,Cavanagh Andrew S.¹^ORCID,Fischer Andreas²,Lill Thorsten²,Sharma Sandeep¹,George Steven M.¹^ORCID

Affiliation:

1. Department of Chemistry, University of Colorado, Boulder, Colorado 80309, United States

2. Lam Research Corporation, Fremont, California 94538, United States

Funder

Division of Chemistry

Division of Graduate Education

Lam Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.2c03616

Reference52 articles.

1. Thermal atomic layer etching: A review

2. Overview of atomic layer etching in the semiconductor industry

3. Mechanisms of Thermal Atomic Layer Etching

4. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride

5. Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions

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