Mechanisms of Thermal Atomic Layer Etching-Reference-Cited by-同舟云学术

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Mechanisms of Thermal Atomic Layer Etching

Published:2020-06-01 Issue:6 Volume:53 Page:1151-1160
ISSN:0001-4842
Container-title:Accounts of Chemical Research
language:en
Short-container-title:Acc. Chem. Res.

Author:

George Steven M.¹^ORCID

Affiliation:

1. Department of Chemistry, University of Colorado, Boulder, Colorado 80309-0215, United States

Funder

Division of Chemistry

Defense Advanced Research Projects Agency

Intel Corporation

Semiconductor Research Corporation

State of Colorado Advanced Industries Accelerator Program

Tokyo Electron America

Publisher

American Chemical Society (ACS)

Subject

General Medicine,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.accounts.0c00084

Reference51 articles.

1. Atomic Layer Deposition: An Overview

2. Overview of atomic layer etching in the semiconductor industry

3. Atomic Layer Etching: An Industry Perspective

4. Atomic Layer Etching at the Tipping Point: An Overview

5. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride

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1. Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process;Applied Surface Science;2024-10

2. Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma;Journal of Vacuum Science & Technology A;2024-09-01

3. Ultrathin ZrO2 thickness control on TiO2/ZrO2 core/shell nanoparticles using ZrO2 atomic layer deposition and etching;Journal of Vacuum Science & Technology A;2024-08-20

4. Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone;Chemistry of Materials;2024-08-02

5. Selectivity between SiO₂ and SiN_x during Thermal Atomic Layer Etching Using Al(CH₃)₃/HF and Spontaneous Etching Using HF and Effect of HF + NH₃ Codosing;Chemistry of Materials;2024-07-01

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