Mechanism of Arsenic Monolayer Doping of Oxide-Free Si(111)-Reference-Cited by-同舟云学术

Mechanism of Arsenic Monolayer Doping of Oxide-Free Si(111)

Published:2016-03-18 Issue:7 Volume:28 Page:1975-1979
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Longo Roberto C.¹,Mattson Eric C.¹,Vega Abraham¹,Cabrera Wilfredo¹,Cho Kyeongjae¹,Chabal Yves J.¹,Thissen Peter²

Affiliation:

1. Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

2. Karlsruher Institut für Technologie (KIT), Institut für Funktionelle Grenzflächen (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Funder

Division of Chemistry

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.5b04394

Reference31 articles.

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4. Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

5. n-type chalcogenides by ion implantation

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