Synthesis of Silicates for High-Performance Oxide Semiconductors: Electronic Structure Analysis
Author:
Affiliation:
1. Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741, United States
2. Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00856
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