Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode-Reference-Cited by-同舟云学术

Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Published:2011-09-27 Issue:10 Volume:3 Page:3813-3818
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Yi¹²,Wang Hao¹,Ye Cong¹,Zhang Jun¹,Wang Hanbin¹,Jiang Yong³

Affiliation:

1. Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, PR China

2. CIMAP, UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Bld Marechal Juin 14050, Caen, France

3. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am2008695

Reference35 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

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4. Ultrathin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation

5. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

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