Ultrathin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation-Reference-Cited by-同舟云学术

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Ultrathin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation

Published:2004-11 Issue:11 Volume:51 Page:1877-1882
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang S.-W.,Hwu J.-G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29674/01347407.pdf?arnumber=1347407

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices;Materials;2022-01-22

2. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021

3. Extraction and Analysis of Gate Leakage Current Mechanism in Silicon Carbide (SiC) MIS Capacitors;IETE Journal of Research;2019-05-22

4. Improving the quality of Al2O3/4H-SiC interface for device applications;Materials Science in Semiconductor Processing;2018-07

5. Effect of post deposition annealing and post metallization annealing on electrical and structural characteristics of Pd/Al2O3/6H-SiC MIS capacitors;Microelectronics International;2018-04-03

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