Point Defects in Silicon-Doped β-Ga<sub>2</sub>O<sub>3</sub>: Hybrid-DFT Calculations-Reference-Cited by-同舟云学术

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Point Defects in Silicon-Doped β-Ga₂O₃: Hybrid-DFT Calculations

Published:2023-11-09 Issue:46 Volume:8 Page:43732-43738
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Shokri Asiyeh¹^ORCID,Melikhov Yevgen²,Syryanyy Yevgen¹³,Demchenko Iraida N.¹

Affiliation:

1. Institute of Plasma Physics and Laser Microfusion, ul. Hery 23, 01-497 Warsaw, Poland

2. Institute of Fundamental Technological Research Polish Academy of Sciences, ul. Pawinskiego 5b, 02-106 Warsaw, Poland

3. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland

Funder

Narodowe Centrum Nauki

Interdyscyplinarne Centrum Modelowania Matematycznego i Komputerowego UW

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c05557

Reference40 articles.

1. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

2. Experimental electronic structure of In2O3and Ga2O3

3. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

4. Iron and intrinsic deep level states in Ga2O3

5. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Selenium Doping on the Electronic Properties of β-Ga2O3 by First-Principles Calculations;Journal of Electronic Materials;2024-07-24

2. Computational study and ion diffusion analyses of native defects and indium alloying in β-Ga2O3 structures;Journal of Vacuum Science & Technology A;2024-03-28

3. Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001);Nano Letters;2024-03-07

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