Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
Author:
Affiliation:
1. School of Materials Science and Engineering, Hebei University of Technology, Tianjin300132, China
2. Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology, Tianjin300130, China
Funder
National Natural Science Foundation of China
S&T Program of Hebei
Research Foundation of Education Bureau of Hebei
Tianjin City
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c04626
Reference32 articles.
1. Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates
2. Imaging UVC-induced DNA damage response in models of minimal cancer
3. Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations;Materials Science in Semiconductor Processing;2024-11
2. Relationship between Annealing and V/III Ratios during MNVPE of AlN Films;Crystal Growth & Design;2024-03-21
3. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01
4. Influence of Porous Media and Substrate Rotation on Aln Deposition in Mnvpe Reactors Based on Cfd Simulations;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3