Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors
Author:
Affiliation:
1. School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
2. Department of NanoBioTronics, Hoseo University, Asan, Chungnam 31499, Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.acs.org/doi/pdf/10.1021/acsomega.0c04924
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1. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
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