Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate
Author:
Affiliation:
1. LAAS-CNRS, Université de Toulouse, CNRS, INP, Toulouse 31031, France
2. Univ. Grenoble Alpes, CNRS, CEA-Leti/Minatec, Grenoble INP, LTM, F-38054 Grenoble, Cedex France
Funder
Agence Nationale de la Recherche
Universit? de Toulouse
Directorate General of Armaments
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c05876
Reference43 articles.
1. A III–V nanowire channel on silicon for high-performance vertical transistors
2. Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires
3. Nanowire photonics
4. Optically pumped room-temperature GaAs nanowire lasers
5. Fifteen-Piconewton Force Detection from Neural Growth Cones Using Nanowire Arrays
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