Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation
Author:
Affiliation:
1. Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 02447, Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.acs.org/doi/pdf/10.1021/acsomega.0c01824
Reference30 articles.
1. Far-UVC light: A new tool to control the spread of airborne-mediated microbial diseases
2. Germicidal Efficacy and Mammalian Skin Safety of 222-nm UV Light
3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies
4. AlGaN photonics: recent advances in materials and ultraviolet devices
5. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
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