Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors-Reference-Cited by-同舟云学术

Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al₂O₃ with a Series of Al(CH₃)_xCl_3–x and Al(C_yH_2y+1)₃ Precursors

Published:2022-06-07 Issue:26 Volume:144 Page:11757-11766
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Oh Il-Kwon¹²^ORCID,Sandoval Tania E.³^ORCID,Liu Tzu-Ling⁴^ORCID,Richey Nathaniel E.¹^ORCID,Nguyen Chi Thang⁵^ORCID,Gu Bonwook⁵,Lee Han-Bo-Ram⁵^ORCID,Tonner-Zech Ralf⁶^ORCID,Bent Stacey F.¹^ORCID

Affiliation:

1. Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea

3. Chemical and Environmental Engineering Department, Universidad Técnica Federico Santa María, Santiago 8940000, Chile

4. Department of Material Science and Engineering, Stanford University, Stanford, California 94305, United States

5. Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea

6. Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstraße 2, Leipzig 04103, Germany

Funder

National Research Foundation of Korea

Semiconductor Research Corporation

U.S. Department of Energy

Fondo Nacional de Desarrollo Cient?fico y Tecnol?gico

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.2c03752

Reference59 articles.

1. A brief review of atomic layer deposition: from fundamentals to applications

2. Atomic layer deposition (ALD): from precursors to thin film structures

3. Atomic Layer Deposition: An Overview

4. Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors

5. Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

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