Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices-Reference-Cited by-同舟云学术

Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

Published:2015-08-19 Issue:17 Volume:27 Page:5868-5877
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Oh Il-Kwon¹,Tanskanen Jukka²,Jung Hanearl¹,Kim Kangsik,Lee Mi Jin,Lee Zonghoon,Lee Seoung-Ki¹,Ahn Jong-Hyun¹,Lee Chang Wan¹,Kim Kwanpyo,Kim Hyungjun¹,Lee Han-Bo-Ram³

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

2. Department of Chemistry, University of Eastern Finland, Joensuu 80101, Finland

3. Department of Materials Science and Engineering, Incheon National University, 406-840 Incheon, Korea

Funder

Korea Evaluation Institute of Industrial Technology

National Research Foundation of Korea

Ministry of Knowledge Economy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.5b01226

Reference61 articles.

1. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

2. Graphene–dielectric integration for graphene transistors

3. Tunable Stress and Controlled Thickness Modification in Graphene by Annealing

4. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

5. Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

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