Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold Slope-Reference-Cited by-同舟云学术

Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold Slope

Published:2014-02-28 Issue:3 Volume:14 Page:1687-1691
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Ji-Hun¹,Chen Zack C.Y.¹,Kwon Soonshin¹,Xiang Jie¹

Affiliation:

1. Department of Electrical and Computer Engineering and ‡Materials Science and Engineering Program, University of California, San Diego, 9500 Gilman Dr., La Jolla, California 92093-0407, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl5006355

Reference32 articles.

1. Low-subthreshold-swing tunnel transistors

2. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

3. Ionescu, A. M. 2002. Proceedings of theInternational Symposium on Quality Electronic Design (ISQED),San Jose, CA,March 21–23, 2005;ISQED:Los Altos, CA; p496.

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