Encapsulation of Zinc Tin Oxide Based Thin Film Transistors-Reference-Cited by-同舟云学术

Encapsulation of Zinc Tin Oxide Based Thin Film Transistors

Published:2009-06-01 Issue:25 Volume:113 Page:11126-11130
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Görrn Patrick¹,Riedl Thomas¹,Kowalsky Wolfgang¹

Affiliation:

1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, and Institute of High-Frequency Technology, Technical University of Braunschweig, Schleinitzstrasse 22, 38106 Braunschweig, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp9018487

Reference25 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Towards See-Through Displays: Fully Transparent Thin-Film Transistors Driving Transparent Organic Light-Emitting Diodes

3. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

4. 4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED Display

5. Reliability and degradation of organic light emitting devices

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