Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays-Reference-Cited by-同舟云学术

Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays

Published:2020-08-08 Issue:11 Volume:13 Page:3033-3040
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Phan Thanh Luan,Duong Dinh Loc,Chau Tuan Khanh,Fan Sidi,Kang Won Tae,Le Thi Suong,Song Hyun Yong,Sun Linfeng,Vu Van Tu,Lee Min Ji,Vu Quoc An,Lee Young Hee,Yu Woo Jong

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s12274-020-2968-5.pdf

Reference48 articles.

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3. Rim, Y. S.; Chen, H. J.; Kou, X. L.; Duan, H. S.; Zhou, H. P.; Cai, M.; Kim, H. J.; Yang, Y. Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways. Adv. Mater. 2014, 26, 4273–4278.

4. Lee, D. H.; Han, S. Y.; Herman, G. S.; Chang, C. H. Inkjet printed high-mobility indium zinc tin oxide thin film transistors. J. Mater. Chem. 2009, 19, 3135–3137.

5. Kim, M. G.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. Nat. Mater. 2011, 10, 382–388.

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