Intrinsic Thermomechanical Properties of Freestanding TEOS-SiO<sub>2</sub> Thin Films Depending on Thickness-Reference-Cited by-同舟云学术

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Intrinsic Thermomechanical Properties of Freestanding TEOS-SiO₂ Thin Films Depending on Thickness

Published:2024-07-05 Issue:7 Volume:6 Page:5293-5300
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim HyeongJun¹,Kim Dong Jun¹,Kim Joon Pyo²,Baek Woo Jin²,Kim Sang Hyeon²^ORCID,Kim Taek-Soo¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00844

Reference33 articles.

1. TEOS-PECVD system for high growth rate deposition of SiO2 films

2. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400°C for through silicon via application

3. Growth of SiO2 films by TEOS-PECVD system for microelectronics applications

4. Residual stress and fracture in thick tetraethylorthosilicate (TEOS) and silane-based PECVD oxide films

5. Lakhera, N.; Howell, J.; Kipperman, S.; Welsh, E.; Schmadlak, I. Strength Characterization of TEOS and FTEOS Interlayer Dielectric Materials to Compare Fracture Risk in Die Stack by 3D FE Simulation Approach. In 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE); IEEE, 2017; pp 1–6.

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